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SMD Type
NPN Silicon AF Transistors KC817W
Features
For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage.
Transistors
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating 50 45 5 500 1 100 250 150 -65 to +150 Unit V V V mA A mA mW
Electrical Characteristics Ta = 25
Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC817-16W DC current gain * Collector saturation voltage * Base to emitter voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 is, duty cycle 2% KC817-25W KC817-40W VCE(sat) IC = 500 mA, IB = 50 mA VBE(sat) IC = 500 mA, IB = 50 mA CCb Ceb fT VCB = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 6 60 170 hFE IC = 100 mA, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO IC = 10 Testconditons A, IE = 0 Min 50 45 5 100 50 100 100 160 250 160 250 350 250 400 630 0.7 1.2 V V pF pF MHz Typ Max Unit V V V nA A nA
IC = 10 mA, IB = 0 IE = 10 A, IC = 0
VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 VEB = 4 V, IC = 0
Marking
NO. Marking KC817-16W 6A KC817-25W 6B KC817-40W 6C
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